| PART |
Description |
Maker |
| APTDF200H100G |
FRED 50-1700V
|
Microsemi
|
| APT30DF20HJ |
FRED 50-1700V
|
Microsemi
|
| APT30DF100HJ |
FRED 50-1700V
|
Microsemi
|
| STC03DE170HV07 STC03DE170HV |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
| CM200DU-34KA |
IGBT Modules:1700V
|
Mitsubishi Electric Corporation
|
| CM400DU-34KA |
IGBT Modules:1700V
|
Mitsubishi Electric Corporation
|
| SIGC101T170R3 |
IGBTs - HV Chips - SIGC101T170R3, 1700V, 75A
|
Infineon
|
| BYP100 C67047-A2254-A2 BYP300 C67047-A2250-A2 |
From old datasheet system
FRED DIODE (FAST RECOVERY EPITAXIAL DIODE SOFT RECOVERY CHARACTERISTICS)
FRED-FET Diode
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| 2MBI300VN-170-50 |
IGBT MODULE (V series) 1700V / 300A / 2 in one package
|
Fuji Electric
|
| STC04IE170HV STC04IE170HV0611 |
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17
|
STMicroelectronics
|
